Pressure and temperature driven phase transitions in HgTe quantum wells

We present theoretical investigations of pressure and temperature driven phase transitions in HgTe quantum wells grown on CdTe buffer. Using the 8-band \textbf{k$\cdot$p} Hamiltonian we calculate evolution of energy band structure at different quantum well width with hydrostatic pressure up to 20 kBar and temperature ranging up 300 K. In particular, we show that in addition to temperature, tuning of hydrostatic pressure allows to drive transitions between semimetal, band insulator and topological insulator phases. Our realistic band structure calculations reveal that the band inversion under hydrostatic pressure and temperature may be accompanied by non-local overlapping between conduction and valence bands. The pressure and temperature phase diagrams are presented.Comment: 9 pages, 8 figures + Supplemental material (5 pages

Cavity-mediated coupling of antiferromagnetic spin waves

Coupling of space-separated oscillators is interesting for quantum and communication technologies. In this work, it is shown that two antiferromagnetic oscillators placed inside an electromagnetic cavity couple cooperatively to its terahertz modes and, in effect, hybridized magnon-polariton modes are formed. This is supported by a systematic study of reflection spectra from two parallel-plane slabs of hematite ($\alpha$-Fe$_2$O$_3$), measured as a function of their temperatures and separation distance, and modeled theoretically. The mediating cavity was formed by the crystals themselves and the experiment was performed in a practical distance range of a few millimetres and above room temperature. Cavity-mediated coupling allows for engineering of complex resonators controlled by their geometry and by sharing properties of their components

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape

Weak antilocalization in a 2D electron gas with the chiral splitting of the spectrum

Motivated by the recent observation of the metal-insulator transition in Si-MOSFETs we consider the quantum interference correction to the conductivity in the presence of the Rashba spin splitting. For a small splitting, a crossover from the localizing to antilocalizing regime is obtained. The symplectic correction is revealed in the limit of a large separation between the chiral branches. The relevance of the chiral splitting for the 2D electron gas in Si-MOSFETs is discussed.Comment: 7 pages, REVTeX. Mistake corrected; in the limit of a large chiral splitting the correction to the conductivity does not vanish but approaches the symplectic valu

Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field

We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the gate voltage and magnetic field. Oscillations analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance, are observed. The results are quantitatively described by a recent theory, showing that the detection is due to rectification of the terahertz radiation by plasma waves related nonlinearities in the gated part of the channel.Comment: 4 pages, 3 figure

Plasmons and Coulomb drag in Dirac/Schroedinger hybrid electron systems

We show that the plasmon spectrum of an ordinary two-dimensional electron gas (2DEG) hosted in a GaAs heterostructure is significantly modified when a graphene sheet is placed on the surface of the semiconductor in close proximity to the 2DEG. Long-range Coulomb interactions between massive electrons and massless Dirac fermions lead to a new set of optical and acoustic intra-subband plasmons. Here we compute the dispersion of these coupled modes within the Random Phase Approximation, providing analytical expressions in the long-wavelength limit that shed light on their dependence on the Dirac velocity and Dirac-fermion density. We also evaluate the resistivity in a Coulomb-drag transport setup. These Dirac/Schroedinger hybrid electron systems are experimentally feasible and open new research opportunities for fundamental studies of electron-electron interaction effects in two spatial dimensions.Comment: 7 pages, 4 figure

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors

We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state.Comment: 7 pages, 4 figure